SSM3K37CT - Silicon N-Channel MOSFET

Datasheet Details

Part number	SSM3K37CT
Manufacturer	Toshiba Electronic Devices & Storage
File Size	200.05 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K37CT Datasheet
Additional preview pages of the SSM3K37CT datasheet.

📁 Similar Datasheet

SSM3K376R - Silicon N-Channel MOSFET (Toshiba)
SSM3K318R - Silicon N-Channel MOSFET (Toshiba)
SSM3K318T - N-Channel 60V MOSFET (VBsemi)
SSM3K320T - Silicon N-Channel MOSFET (Toshiba)
SSM3K333R - N-CHANNEL POWER MOSFET (UTC)
SSM3K333RG-AE3-R - N-CHANNEL POWER MOSFET (UTC)
SSM3K333RL-AE3-R - N-CHANNEL POWER MOSFET (UTC)
SSM3K337R - Silicon N-Channel MOSFET (Toshiba)
SSM3K339R - Silicon N-Channel MOSFET (Toshiba)
SSM3K341R - Silicon N-Channel MOSFET (Toshiba)

Other Datasheets by Toshiba Semiconductor

SSM3K37FS - Silicon N-Channel MOSFET
SSM3K37MFV - Silicon N-Channel MOSFET
SSM3K301T - Silicon N-Channel MOSFET
SSM3K302T - Power Management Switch Applications
SSM3K303T - Silicon N-Channel MOSFET
SSM3K309T - Silicon N-Channel MOSFET
SSM3K310T - Silicon N-Channel MOSFET
SSM3K315T - Silicon N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

SSM3K37CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K37CT ○ High Speed Switching Applications ○ Analog Switch Applications Unit : mm • 1.5Vdrive • Low ON-resistance RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range VDSS 20 V VGSS ± 10 V ID 200 mA IDP 400 PD(Note1) 100 mW Tch 150 °C Tstg −55 to 150 °C CST3 Note: Using continuously under heavy loads (e.g.

Published: Sep 19, 2014 |