SSM6K202FE mosfet equivalent, silicon n-channel mosfet.
(1) 1.8-V drive (2) Low drain-source on-resistance
: RDS(ON) = 145 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 101 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 85 mΩ (max) (@VGS = 4.0 V)
3. P.
* High-Speed Switching
* Power Management Switches
2. Features
(1) 1.8-V drive (2) Low drain-source on-resistanc.
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