SSM6K25FE - Silicon N-Channel MOSFET

Datasheet Details

Part number	SSM6K25FE
Manufacturer	Toshiba Electronic Devices & Storage
File Size	201.51 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM6K25FE Datasheet
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SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K25FE High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 395mΩ (max) (@VGS = 1.8 V) Ron = 190mΩ (max) (@VGS = 2.5 V) Ron = 145mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm 1.6±0.05 1.2±0.05 0.2±0.05 1 6 2 5 1.6±0.05 1.0±0.05 0.5 0.5 Characteristics Symbol Rating Unit 3 4 0.12±0.05 0.55±0.05 Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ± 12 V Drain current DC Pulse Drain power dissipation Channel temperature ID 0.5 A IDP 1.

Published: Jul 21, 2010 |