TC55V16256JI-12 Datasheet MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Manufacturer: Toshiba

Download the TC55V16256JI-12 datasheet PDF. This datasheet also includes the TC55V16256FTI-12 variant, as both parts are published together in a single manufacturer document.

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TC55V16256JI-12 mos digital integrated circuit silicon gate cmos by Toshiba - Datasheet Preview — Note: The manufacturer provides a single datasheet file (TC55V16256FTI-12_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	TC55V16256JI-12
Manufacturer	Toshiba
File Size	223.48 KB
Description	MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet	TC55V16256JI-12 Datasheet

General Description

The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits.

Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply.

Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access.

Overview

TC55V16256JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC.

Key Features

Fast access time (the following are maximum values) TC55V16256JI/FTI-12:12 ns TC55V16256JI/FTI-15:15 ns Low-power dissipation (the following are maximum values) Cycle Time Operation (max) 12 230 15 200 20 170 25 150 ns mA.
Standby:10 mA (both devices) Single power supply voltage of 3.3 V ± 0.3 V Fully static operation All inputs and outputs are LVTTL compatible Output buffer control using OE Data byte control usin.

More Datasheets from Toshiba

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