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TC55V400AFT-55 - 16-BIT FULL CMOS STATIC RAM

General Description

The TC55V400AFT is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.

Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply.

Key Features

  • Low-power dissipation Operating: 10.8 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features using CE1 and CE2 Data retention supply voltage of 1.5 to 3.6 V Direct TTL compatibility for all inputs and outputs Wide operating temperature range of -40° to 85°C Standby Current (maximum): 3.6 V 3.0 V 7 mA 5 mA.
  • Access Times (maximum): TC55V400AFT -55 Access Time CE1 Access Time -70 70 ns 70 ns 70 ns 35 ns 55 ns 55 ns 55 ns 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TC55V400AFT-55,-70 www.DataSheet4U.com TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V400AFT is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 0.5 mA standby current (at VDD = 3 V, Ta = 25°C, maximum) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs.