TC55VBM316AFTN - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba Semiconductor

Datasheet Details

Part number	TC55VBM316AFTN
Manufacturer	Toshiba ↗ Semiconductor
File Size	258.28 KB
Description	MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet	TC55VBM316AFTN_ToshibaSemiconductor.pdf

The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits/1,048,576 words by 8 bits.

Low-power dissipation Operating: 9 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features using CE1 and CE2 Data retention supply voltage of 1.5 to 3.6 V Direct TTL compatibility for all inputs and outputs Wide operating temperature range of.
40° to 85°C Standby Current (maximum): 3.6 V 3.0 V 10 µA 5 µA.
Access Times (maximum): TC55VBM316AFTN/ASTN 40 Access Time CE1 Access Time 55.

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Published: Jul 30, 2009 |