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TC58DVM82A1FT00 256-MBIT (32M x 8 BITS) CMOS NAND E2PROM

TC58DVM82A1FT00 Description

m o TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS .c U CMOS NAND E PROM 256-MBIT (32M × 8 BITS) 4 t .
e e h S a at .

TC58DVM82A1FT00 Features

* w 2 TC58DVM82A1FT00 The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The device uses single power supply (2.7 V to 3.6 V for VCC). The device has a 528-byte static register which a

TC58DVM82A1FT00 Applications

* such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
* Organization Memory cell allay 528 × 64K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, R

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256-MBIT 32M BITS CMOS NAND E2PROM Toshiba Semiconductor
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