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TC74AC10F - Triple 3-Input NAND Gate

Features

  • High speed: tpd = 5.0 ns (typ. ) at VCC = 5 V.
  • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C.
  • High noise immunity: VNIH = VNIL = 28% VCC (min).
  • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission lines.
  • Balanced propagation delays: tpLH ∼.
  • tpHL.
  • Wide operating voltage range: VCC (opr) = 2 to 5.5 V.
  • Pin and function compatible with 74F10 Pin Assignment TC74AC10P TC74AC10F W.

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Datasheet Details

Part number TC74AC10F
Manufacturer Toshiba
File Size 260.74 KB
Description Triple 3-Input NAND Gate
Datasheet download datasheet TC74AC10F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TC74AC10P/F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC10P, TC74AC10F Triple 3-Input NAND Gate The TC74AC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Features • High speed: tpd = 5.0 ns (typ.
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