TH50VSF3582AASB
Key Features
- Data retention supply voltage VCCs = 1.5 V~3.3 V
- Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH)
- Block erase architecture for flash memory 8 × 8 Kbytes 63 × 64 Kbytes
- Organization
- CIOF VCC VCC VSS CIOS VCC VSS VSS Flash Memory 2,097,152 words of 16 bits 2,097,152 words of 16 bits 4,194,304 words of 8 bits SRAM 524,288 words of 16 bits 1,048,576 words of 8 bits 1,048,576 words of 8 bits * * * *
