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TIM1011-8L Datasheet, Toshiba Semiconductor

TIM1011-8L fet equivalent, microwave power gaas fet.

TIM1011-8L Avg. rating / M : 1.0 rating-14

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TIM1011-8L Datasheet

Features and benefits


* LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level
* HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz
* HIGH GAIN G1dB=6.0 dB .

Application

of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third p.

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