Datasheet Summary
Features
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 38.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN
G1dB= 6.5dB at 14.0GHz to 14.5GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain pression Point Power Gain at 1dB Gain pression Point
Drain Current
SYMBOL
CONDITIONS
P1dB G1dB IDS
VDS= 9V IDSset= 2.0A f= 14.0 to 14.5GHz
UNIT dBm dB
Power Added Efficiency
add
%
Channel Temperature Rise
Tch
(VDS X IDS + Pin
- P1dB)
X Rth(c-c)
°C
Remended Gate Resistance(Rg): 100
MIN. 37.5 5.5
TYP. MAX.
2.25...
