ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 41.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN
G1dB= 10.0dB at 5.9GHz to 6.4GHz ŋLOW INTERMODULATION DISTORTION
IM3= -47dBc a.
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