ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 46.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN
G1dB= 9.0dB at 5.9GHz to 6.4GHz ŋLOW INTERMODULATION DISTORTION
IM3= -45dBc at.
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