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TJ20A10M3 Datasheet, Toshiba Semiconductor

TJ20A10M3 transistor equivalent, field effect transistor.

TJ20A10M3 Avg. rating / M : 1.0 rating-138

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TJ20A10M3 Datasheet

Application


* Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.)
* High forward transfer admittance: |Yfs| = 50 S (typ.

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TJ20A10M3 Page 1 TJ20A10M3 Page 2 TJ20A10M3 Page 3

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