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TJ20A10M3 - Field Effect Transistor

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    TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI) TJ20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −100 V) • Enhancement-model: Vth = −2.0 to −4.
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