TK100E08N1 - Silicon N-Channel MOSFET

Name: TK100E08N1
SKU: TK100E08N1-837854

Toshiba Semiconductor

The TK100E08N1 by Toshiba Semiconductor is a Silicon N-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	TK100E08N1
Manufacturer	Toshiba Semiconductor
File Size	247.30 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK100E08N1-ToshibaSemiconductor.pdf
Additional preview pages of the TK100E08N1 datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK100E08N1 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pu.

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Published: Sep 10, 2014 |