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TK10J80E - Silicon N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK10J80E TO-3P(N) 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2013-08 1 2014-02-28 Rev.4.0 TK10J80E 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source vo.

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MOSFETs Silicon N-Channel MOS (π-MOS) TK10J80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK10J80E TO-3P(N) 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2013-08 1 2014-02-28 Rev.4.0 TK10J80E 4.
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