Datasheet4U Logo Datasheet4U.com

TK11A50D - N-Channel MOSFET

Features

  • d to control combustions or explosions, safe.

📥 Download Datasheet

Datasheet preview – TK11A50D

📁 Similar Datasheet

  • TK11A50D - N-Channel MOSFET (INCHANGE)
  • TK11A45D - N-Channel MOSFET (INCHANGE)
  • TK11A60D - N-Channel MOSFET (INCHANGE)
  • TK11A65D - N-Channel MOSFET (INCHANGE)
  • TK11A65W - N-Channel MOSFET (INCHANGE)
  • TK11031 - TEMPERATURE SENSOR IC (TOKO)
  • TK11032 - TEMPERATURE SENSOR IC (TOKO)
  • TK11033 - TEMPERATURE SENSOR IC (TOKO)
  • TK11034 - TEMPERATURE SENSOR IC (TOKO)
  • TK11041 - TEMPERATURE SENSOR IC (TOKO)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TK11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK11A50D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 ±30 11 44 45 264 11 4.5 150 −55 to 150 A W mJ A mJ °C °C Unit V V 2.54 0.64 ± 0.15 15.0 ± 0.3 • • • • Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.
Published: |