Part number:
TK12A50E
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
229.97 KB
Description:
Mosfets.
TK12A50E Datasheet (229.97 KB)
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.40 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1.2 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 1 2013-02-13 Rev.2.0 TK12
TK12A50E Datasheet (229.97 KB)
TK12A50E
Toshiba ↗ Semiconductor
229.97 KB
Mosfets.
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