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TK14G65W5 - Silicon N-Channel MOSFET

Features

  • (1) (2) (3) (4) Fast reverse recovery time: trr = 100 ns (typ. ) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ. ) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.69 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source D2PAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current.

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Datasheet Details

Part number TK14G65W5
Manufacturer Toshiba Semiconductor
File Size 237.41 KB
Description Silicon N-Channel MOSFET
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TK14G65W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK14G65W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.69 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source D2PAK 4.
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