Datasheet4U Logo Datasheet4U.com

TK15E60U - MOSFETs

Features

  • (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.24 Ω (typ. ) High forward transfer admittance: |Yfs| = 8.5 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current.

📥 Download Datasheet

Datasheet preview – TK15E60U

📁 Similar Datasheet

  • TK15E60U - N-Channel MOSFET (INCHANGE)
  • TK15121 - Grand Earthing System Audio Signal Mute IC (TOKO)
  • TK15125 - Dual Supply Grand Earthing System Audio Signal Mute (TOKO)
  • TK15210 - Audio Analog Switch (TOKO)
  • TK15211 - Audio Analog Switch (TOKO)
  • TK15220 - Audio Analog Switch (TOKO)
  • TK15321 - Audio Analog Switch (TOKO)
  • TK15322 - Audio Analog Switch (TOKO)
  • TK15323 - Audio Analog Switch (TOKO)
  • TK15324 - Audio Analog Switch (TOKO)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TK15E60U MOSFETs Silicon N-Channel MOS (DTMOS) TK15E60U 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.24 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 4.
Published: |