TK18E10K3 Datasheet, Toshiba Semiconductor

(1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forward transfer admittance: |Yfs| = 28 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 10.

* Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forwa.