Datasheet4U Logo Datasheet4U.com

TK56A12N1 Datasheet Silicon N-Channel MOSFET

Manufacturer: Toshiba

📥 Download Datasheet

Datasheet Details

Part number TK56A12N1
Manufacturer Toshiba
File Size 237.50 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK56A12N1 Datasheet

Overview

MOSFETs Silicon N-channel MOS (U-MOS-H) TK56A12N1 1.

Applications • Switching Voltage Regulators 2.

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK56A12N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 120 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit).

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo TK56A12N1 N-Channel MOSFET INCHANGE

More Datasheets from Toshiba

Part Number Description
TK56E12N1 Silicon N-Channel MOSFET
TK50A04K3 MOSFETs
TK50F15J1 MOSFETs
TK50J30D Silicon N-Channel MOSFET
TK50J60U MOSFETs
TK50P03M1 Silicon N-Channel MOSFET
TK50P04M1 Silicon N-Channel MOSFET
TK50S04K3L Silicon N-Channel MOSFET
TK50X15J1 N-Channel MOSFET
TK55A10J1 N-Channel MOSFET