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TK58A06N1 Datasheet Silicon N-Channel MOSFET

Manufacturer: Toshiba

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Datasheet Details

Part number TK58A06N1
Manufacturer Toshiba
File Size 234.96 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK58A06N1 Datasheet

Overview

MOSFETs Silicon N-channel MOS (U-MOS-H) TK58A06N1 1.

Applications • Switching Voltage Regulators 2.

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK58A06N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (N.

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