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TK6A45DA - Silicon N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 1.1 Ω (typ. ) (2) High forward transfer admittance: |Yfs| = 3.0 S (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK6A45DA 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 450 V Gate-source vo.

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MOSFETs Silicon N-Channel MOS (π-MOS) TK6A45DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.1 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 3.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK6A45DA 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 450 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 5.
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