Datasheet4U Logo Datasheet4U.com

TK6A53D - N-Channel MOSFET

Features

  • mbustions or explosions, safety devices, elevato.

📥 Download Datasheet

Datasheet preview – TK6A53D

📁 Similar Datasheet

  • TK6A53D - N-Channel MOSFET (INCHANGE)
  • TK6A50D - N-Channel MOSFET (INCHANGE)
  • TK6A - Current Transducer (Topstek)
  • TK6A45DA - N-Channel MOSFET (INCHANGE)
  • TK6A60D - N-Channel MOSFET (INCHANGE)
  • TK6A60W - N-Channel MOSFET (INCHANGE)
  • TK6A65D - N-Channel MOSFET (INCHANGE)
  • TK6A65D - N-Channel 650V Power MOSFET (VBsemi)
  • TK6A65W - N-Channel MOSFET (INCHANGE)
  • TK6A65W - N-Channel MOSFET (Toshiba)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TK6A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A53D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 525 ±30 6 24 35 147 6 3.5 150 −55 to 150 A W mJ A mJ °C °C Unit V V 2.54 0.64 ± 0.15 15.0 ± 0.3 • • • • Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 525 V) Enhancement mode: Vth = 2.4 to 4.
Published: |