* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-3P(N) 4. Absolute Maximum
TK70J04K3Z Datasheet (238.60 KB)
TK70J04K3Z
Toshiba ↗ Semiconductor
238.60 KB
Mosfets.
TK70J04K3Z MOSFETs Silicon N-channel MOS (U-MOS) TK70J04K3Z 1. Applications Switching Voltage Regulators DC-DC Convert.
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