Datasheet4U Logo Datasheet4U.com

TK70J04K3Z - MOSFETs

Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.2 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-3P(N) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy.

📥 Download Datasheet

Datasheet preview – TK70J04K3Z

📁 Similar Datasheet

  • TK70J04K3Z - N-Channel MOSFET (INCHANGE)
  • TK70J06K3 - N-Channel MOSFET (INCHANGE)
  • TK70001 - SINGLE INPUT/ TWO OUTPUT SOLID STATE SWITCH (TOKO)
  • TK70002 - SINGLE INPUT/ TWO OUTPUT SOLID STATE SWITCH (TOKO)
  • TK70003 - SINGLE OUTPUT/ TWO INPUT SOLID STATE SWITCH (TOKO)
  • TK70110M - 1.0 V LOW DROPOUT LINEAR REGULATOR (TOKO)
  • TK70203M - 1.03 V REGULATOR WITH ON/OFF SWITCH (TOKO)
  • TK70403 - 1.03 V REGULATOR WITH ON/OFF SWITCH (TOKO)
  • TK70X04K3 - Silicon N-channel MOSFET (Toshiba)
  • TK70X04K3Z - Silicon N-channel MOSFET (Toshiba)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TK70J04K3Z MOSFETs Silicon N-channel MOS (U-MOS) TK70J04K3Z 1. Applications • • • Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-3P(N) 4.
Published: |