TK72E12N1 - Silicon N-Channel MOSFET

Product Overview

Toshiba Semiconductor

Part number	TK72E12N1
Manufacturer	Toshiba Semiconductor
File Size	247.83 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK72E12N1 Datasheet
Additional preview pages of the TK72E12N1 datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK72E12N1 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pu.

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Sep 10, 2014 |