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TK72E12N1 - Silicon N-Channel MOSFET

Toshiba Semiconductor

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Datasheet Details

Part number: TK72E12N1
Manufacturer: Toshiba ↗ Semiconductor
File Size: 247.83 KB
Datasheet: TK72E12N1-ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

TK72E12N1 Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK72E12N1 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pu.

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Silicon N-Channel MOSFET Toshiba Semiconductor

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