Datasheet4U Logo Datasheet4U.com

TK72E12N1 - Silicon N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK72E12N1 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pu.

📥 Download Datasheet

Datasheet preview – TK72E12N1

Datasheet Details

Part number TK72E12N1
Manufacturer Toshiba Semiconductor
File Size 247.83 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK72E12N1 Datasheet
Additional preview pages of the TK72E12N1 datasheet.

📁 Similar Datasheet

  • TK72E12N1 - N-Channel MOSFET (INCHANGE)
  • TK72E08N1 - N-Channel MOSFET (INCHANGE)
  • TK72A08N1 - N-Channel MOSFET (INCHANGE)
  • TK72A12N1 - N-Channel MOSFET (INCHANGE)
  • TK7.5A - Current Transducer (Topstek)
  • TK70001 - SINGLE INPUT/ TWO OUTPUT SOLID STATE SWITCH (TOKO)
  • TK70002 - SINGLE INPUT/ TWO OUTPUT SOLID STATE SWITCH (TOKO)
  • TK70003 - SINGLE OUTPUT/ TWO INPUT SOLID STATE SWITCH (TOKO)
  • TK70110M - 1.0 V LOW DROPOUT LINEAR REGULATOR (TOKO)
  • TK70203M - 1.03 V REGULATOR WITH ON/OFF SWITCH (TOKO)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFETs Silicon N-channel MOS (U-MOS-H) TK72E12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK72E12N1 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.
Published: |