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Toshiba Electronic Components Datasheet

TK72E12N1 Datasheet

MOSFETs

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MOSFETs Silicon N-channel MOS (U-MOS-H)
TK72E12N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 3.6 m(typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
TK72E12N1
TO-220
1: Gate
2: Drain (heatsink)
3: Source
1 2012-08-09
Rev.1.0


Toshiba Electronic Components Datasheet

TK72E12N1 Datasheet

MOSFETs

No Preview Available !

TK72E12N1
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 120 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
ID
179 A
Drain current (DC)
(Note 1), (Note 3)
ID
72
Drain current (pulsed)
(t = 1 ms)
(Note 1)
IDP
360
Power dissipation
(Tc = 25)
PD 255 W
Single-pulse avalanche energy
(Note 4)
EAS
256 mJ
Avalanche current
IAR 72 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Limited by silicon chip capability. Package limit is 100 A.
Note 3: Device mounted with heatsink so that Rth(ch-a) becomes 2.77/W.
Note 4: VDD = 80 V, Tch = 25(initial), L = 48.3 µH, IAR = 72 A
Symbol
Rth(ch-c)
Rth(ch-a)
Max Unit
0.49 /W
83.3
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2012-08-09
Rev.1.0


Part Number TK72E12N1
Description MOSFETs
Maker Toshiba Semiconductor
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TK72E12N1 Datasheet PDF






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