Part number:
TK7J90E
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
231.06 KB
Description:
Silicon n-channel mosfet.
TK7J90E-ToshibaSemiconductor.pdf
Datasheet Details
TK7J90E Features
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-3P(N) Start of commercial production
TK7J90E-ToshibaSemiconductor.pdf
Datasheet Details
TK7J90E
Toshiba ↗ Semiconductor
231.06 KB
Silicon n-channel mosfet.
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