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TK7P60W5 Datasheet - Toshiba Semiconductor

TK7P60W5 - Silicon N-Channel MOSFET

TK7P60W5 Features

* (1) Fast reverse recovery time: trr = 75 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.35 mA) 3. Packaging and Internal Circuit TK7P60W5

TK7P60W5-ToshibaSemiconductor.pdf