Part number:
TK8A60W
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
264.82 KB
Description:
Silicon n-channel mosfet.
* (1) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit TK8A60W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute
TK8A60W
Toshiba ↗ Semiconductor
264.82 KB
Silicon n-channel mosfet.
📁 Related Datasheet
TK8A60DA Transistor (Toshiba Semiconductor)
TK8A60DA N-Channel MOSFET (INCHANGE)
TK8A60DA N-Channel 650V Power MOSFET (VBsemi)
TK8A60W5 Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK8A65D Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK8A65D N-Channel MOSFET (INCHANGE)
TK8A65W N-Channel MOSFET (INCHANGE)
TK8A65W N-Channel MOSFET (Toshiba)
TK8A10K3 Field Effect Transistor (Toshiba Semiconductor)
TK8A25DA Silicon N-Channel MOSFET (Toshiba)
