TMD1414-2C - MICROWAVE POWER MMIC AMPLIFIER

Features

n HIGH POWER P1dB=34.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=26.0dB at 13.75GHz to 14.5GHz n BROAD BAND.

TMD1414-2C MICROWAVE POWER MMIC AMPLIFIER by Toshiba Semiconductor - Datasheet Preview — Datasheet preview – TMD1414-2C

Datasheet Details

Part number	TMD1414-2C
Manufacturer	Toshiba Electronic Devices & Storage
File Size	69.77 KB
Description	MICROWAVE POWER MMIC AMPLIFIER
Datasheet	TMD1414-2C Datasheet
Additional preview pages of the TMD1414-2C datasheet.

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www.DataSheet4U.com MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD1414-2C FEATURES n HIGH POWER P1dB=34.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=26.0dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage Temperature SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm °C °C RATING 10 -10 20 -40 ∼ +90 -65 ∼ +175 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Operating Frequency Output Power at 1dB Gain Compression Point 1dB Gain Compression Point Gain Flatness Drain Current Power Added Efficiency ∆G IDD ηadd G1dB VDD=7V VGG=-5V dB dB A % 21.0    26.0  1.4 29  ±1.0 1.

Published: Apr 9, 2007 |