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Toshiba Electronic Components Datasheet

TPC8033-H Datasheet

Field Effect Transistor

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TPC8033-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H)
TPC8033-H
High Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
Small footprint due to small and thin package
High-speed switching
Small gate charge: QSW = 9.6 nC (typ.)
Low drain-source ON-resistance: RDS (ON) = 4.0 m(typ.)
High forward transfer admittance: |Yfs| = 62 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
17
68
1.9
1.0
188
17
0.09
150
55 to 150
Note 1, Note 2, Note 3 and Note 4: See the next page.
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2007-12-25


Toshiba Electronic Components Datasheet

TPC8033-H Datasheet

Field Effect Transistor

No Preview Available !

Thermal Characteristics
Characteristic
Symbol
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
Max
65.8
125
Unit
°C/W
°C/W
Marking (Note 5)
TPC8033-H
TPC8033
H
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a) (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 500μH, RG = 25 Ω, IAR = 17 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: * Weekly code: (Three digits)
Week of manufacture
(01 for first week of year: continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
2 2007-12-25



Part Number TPC8033-H
Description Field Effect Transistor
Maker Toshiba Semiconductor
Total Page 7 Pages
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TPC8033-H Datasheet PDF





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