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TPC8051-H - MOSFETs

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TPC8051-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8051-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 16 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.3 mΩ (typ.) High forward transfer admittance: |Yfs| = 45 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 80 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 80 80 ±20 13 52 1.9 1.0 110 13 0.
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