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TPC8060-H - Silicon N-Channel MOSFET

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TPC8060-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8060-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 16 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 3.1 mΩ (typ.) (VGS = 4.5 V) • High forward transfer admittance: |Yfs| = 63 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.
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