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TPC8204 - Field Effect Transistor

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TPC8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) TPC8204 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l Small footprint due to small and thin package l Low drain−source ON resistance l Low leakage current l Enhancement−mode : RDS (ON) = 16 mΩ (typ.) l High forward transfer admittance : |Yfs| = 18 S (typ.) : IDSS = 10 µA (max) (VDS = 20 V) : Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 20 20 ±12 6 24 1.5 W PD(2) 1.
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