TPCA8008-H - Field Effect Transistor

Features

tended nor warranted for use in equipment or systems that require extraordin.

TPCA8008-H Field Effect Transistor by Toshiba Semiconductor - Datasheet Preview — Datasheet preview – TPCA8008-H

Datasheet Details

Part number	TPCA8008-H
Manufacturer	Toshiba Electronic Devices & Storage
File Size	173.13 KB
Description	Field Effect Transistor
Datasheet	TPCA8008-H Datasheet
Additional preview pages of the TPCA8008-H datasheet.

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Full PDF Text Transcription

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TPCA8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCA8008-H High Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications 6.0±0.3 Unit: mm 0.5±0.1 1.27 8 0.4±0.1 5 0.05 M A • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.7 nC (typ.) 5.0±0.2 0.15±0.05 1 0.95±0.05 4 0.595 A High forward transfer admittance: |Yfs| = 3.3S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 5.0±0.2 S 1 4 0.6±0.1 4.25±0.

Published: Sep 20, 2014 |