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TPCA8009-H www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ)
TPCA8009-H
High Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications
6.0±0.3
Unit: mm
0.5±0.1 1.27 8 0.4±0.1 5 0.05 M A
5.0±0.2
• • • • • • •
Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.7 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 0.23Ω (typ.) High forward transfer admittance: |Yfs| = 4.5S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 150 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
0.15±0.05
1 0.95±0.05
4
0.595 A
5.0±0.2
S 1 4
4.25±0.