TPCA8060-H - Field Effect Transistor

Features

ating and determining the applicability of any.

TPCA8060-H Field Effect Transistor by Toshiba Semiconductor - Datasheet Preview — Datasheet preview – TPCA8060-H

Datasheet Details

Part number	TPCA8060-H
Manufacturer	Toshiba Electronic Devices & Storage
File Size	207.14 KB
Description	Field Effect Transistor
Datasheet	TPCA8060-H Datasheet
Additional preview pages of the TPCA8060-H datasheet.

📁 Similar Datasheet

TPCA8062-H - MOSFET (Toshiba)
TPCA8063-H - MOSFET (Toshiba)
TPCA8064-H - MOSFET (Toshiba)
TPCA8065-H - Field Effect Transistor (Toshiba)
TPCA8068-H - MOSFET (Toshiba)
TPCA8019-H - MOSFET (TOSHIBA)
TPCA8030-H - Silicon N-Channel MOSFET (Toshiba)
TPCA8036-H - Silicon N-Channel MOSFET (Toshiba)
TPCA8040-H - Silicon N-Channel MOSFET (Toshiba)
TPCA8042 - Silicon N-Channel MOSFET (Toshiba)

Other Datasheets by Toshiba Semiconductor

TPCA8003-H - Field Effect Transistor Silicon N Channel MOS Type
TPCA8004-H - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
TPCA8005-H - Silicon N Channel MOS Type
TPCA8006-H - Silicon N-Channel MOSFET
TPCA8007-H - Switching Regulator Applications
TPCA8008-H - Field Effect Transistor
TPCA8009-H - High Speed Switching Applications
TPCA8010-H - Silicon N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

TPCA8060-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCA8060-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications 6.0 ± 0.3 5.0 ± 0.2 Unit: mm 1.27 0.4 ± 0.1 8 5 0.05 M A • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 17nC (typ.) 0.15 ± 0.05 1 0.95 ± 0.05 4 0.595 0.166 ± 0.05 4 A Low drain-source ON-resistance: RDS (ON) = 2.8 mΩ (typ.) ( VGS = 4.5 V) High forward transfer admittance: |Yfs| = 141 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 5.0 ± 0.2 1 0.6 ± 0.

Published: Sep 20, 2014 |