TPCA8135 mos equivalent, mosfets silicon p-channel mos.
(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancemen.
* DC-DC Converters
2. Features
(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 96 mΩ .
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