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TPCP8001-H - MOSFET

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TPCP8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) www.DataSheet4U.com TPCP8001-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 3.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 13 mΩ (typ.) High forward transfer admittance: |Yfs| = 16 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) S Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.475 1 4 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 1.12 +0.13 -0.