TPCP8003-H
Key Features
- Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 7.5 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 130 mΩ (typ.) High forward transfer admittance: |Yfs| = 5.4 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 100V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1mA)
