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TPCP8005-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
TPCP8005-H
High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications
• • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 9.8 mΩ (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
S
Unit: mm
0.33±0.05 0.05 M A
8 5
2.4±0.1 0.475
1 4
B A
0.65 2.9±0.1
0.05 M B
0.8±0.05 0.025
S
0.17±0.02
0.28 +0.1 -0.11
1.12 -0.12
+0.
TPCP8005-H Datasheet
