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TPCP8006 - MOSFET

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  • ems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human.

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TPCP8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) www.DataSheet4U.com TPCP8006 Notebook PC Applications Portable Equipment Applications 0.33 ± 0.05 Unit: mm 8 0.05 M • • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.) High forward transfer admittance:|Yfs| = 36 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA) 0.475 A 5 2.4 ± 0.1 2.8 ± 0.1 0.05 A M 1 0.65 2.9 ± 0.1 4 B B 0.8 ± 0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Rating 20 20 ±12 9.1 36.4 1.