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TPCP8008-H - Field Effect Transistor

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TPCP8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCP8008-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications 0.33 ± 0.05 Unit: mm 8 0.05 M • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.8 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.) (VGS = 4.5 V) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) S A 5 2.4 ± 0.1 2.8 ± 0.1 0.05 A M 0.475 1 0.65 2.9 ± 0.1 4 B B 0.8 ± 0.05 0.025 S 0.17 ± 0.02 ＋0.1 0.28 －0.11 ＋0.13 1.12 －0.12 ＋0.13 1.12 －0.12 0.28 ＋0.1 －0.
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