TPCS8201 Description
TPCS8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) l High forward transfer admittance:.
TPCS8201 Key Features
- Small footprint due to small and thin package
- Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 13 S (typ.)
- Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
- Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Maximum Ratings (Ta = 25°C) Characteristics Sym