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TOSHIBA Transistor Silicon PNP Epitaxial Type
TTA007
TTA007
High-Speed Switching Applications DC-DC Converter Applications
Unit: mm
• High DC current gain : hFE = 200 to 500 (IC = −0.1 A) • Low collector-emitter saturation voltage : VCE(sat) = −0.2 V (max) • High-speed switching : tf = 70 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−7
V
Collector current
DC
IC
Pulse
ICP
−1 A
−2
Base current
IB
−0.1
A
t = 10 s
PC
Collector power dissipation
1.1 W
DC
(Note 1)
0.7
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to150
°C
Note1: Mounted on FR4 board (glass epoxy; 645 mm2,1.
TTA007 Datasheet
