Datasheet4U Logo Datasheet4U.com

TC1102 - Super Low Noise GaAs FETs

Description

The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain.

The device can be used in circuits up to 40 GHz and suitable for low noise application including a wide range of commercial and military applications.

Features

  • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO.

📥 Download Datasheet

Datasheet Details

Part number TC1102
Manufacturer Transcom
File Size 112.69 KB
Description Super Low Noise GaAs FETs
Datasheet download datasheet TC1102 Datasheet
Other Datasheets by Transcom

Full PDF Text Transcription

Click to expand full text
TRANSCOM TC1102 January 2002 Super Low Noise GaAs FETs FEATURES • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO ENLARGEMENT DESCRIPTION The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain. The device can be used in circuits up to 40 GHz and suitable for low noise application including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
Published: |