- Part: TC1301
- Description: Low Noise and Medium Power GaAs FETs
- Manufacturer: Transcom
- Size: 241.07 KB
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TC1301 Key Features
- High Associated Gain: Ga = 10 dB Typical at 12 GHz
- High Dynamic Range: 1 dB pression Power P-1 = 24 dBm at 12 GHz
- Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 600 µm All-Gold Metallization for High Reliability 100 % DC Tested DES
Other TC1301 Datasheets
| Manufacturer |
Part Number |
Description |
Microchip Technology |
TC1301A
|
Dual LDO |
Microchip Technology |
TC1301B
|
Dual LDO |