TC1301 - Low Noise and Medium Power GaAs FETs

Product Overview

Transcom

Datasheet Details

Part number	TC1301
Manufacturer	Transcom
File Size	241.07 KB
Description	Low Noise and Medium Power GaAs FETs
Datasheet	TC1301 Datasheet
Additional preview pages of the TC1301 datasheet.

Product details

Description

The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range.

Features

Low Noise Figure: NF = 0.8 dB Typical at 12 GHz www. DataSheet4U. com.
High Associated Gain: Ga = 10 dB Typical at 12 GHz.
High Dynamic Range: 1 dB Compression Power P-1 = 24 dBm at 12 GHz.
Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 600 µm All-Gold Metallization for High Reliability 100 % DC Tested.

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Other Datasheets by Transcom

TC1101 - Low Noise and Medium Power GaAs FETs
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Published: Jun 9, 2008 |