TC1301 Datasheet Low Noise and Medium Power GaAs FETs

Manufacturer: Transcom

TC1301 low noise and medium power gaas fets by Transcom - Datasheet Preview

Datasheet Details

Part number	TC1301
Manufacturer	Transcom
File Size	241.07 KB
Description	Low Noise and Medium Power GaAs FETs
Download	TC1301 Download (PDF)

General Description

The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range.

The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications.

All devices are 100% DC tested to assure consistent quality.

Overview

TC1301 REV.2_04/12/2004 Low Noise and Medium Power GaAs FETs.

Key Features

Low Noise Figure: NF = 0.8 dB Typical at 12 GHz www. DataSheet4U. com.
High Associated Gain: Ga = 10 dB Typical at 12 GHz.
High Dynamic Range: 1 dB Compression Power P-1 = 24 dBm at 12 GHz.
Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 600 µm All-Gold Metallization for High Reliability 100 % DC Tested.

📁 Similar Datasheet

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	TC1301B	Dual LDO	Microchip Technology

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