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MMBD4448W Datasheet, Transys

MMBD4448W diode equivalent, switching diode.

MMBD4448W Avg. rating / M : 1.0 rating-17

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MMBD4448W Datasheet

Features and benefits

Power dissipation PD: 200 mW (Tamb=25℃) Collector current IO: 250 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +1.

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MMBD4448W Page 1

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