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TGF2023-2-20 Datasheet 90 Watt Discrete Power Gan On Sic Hemt

Manufacturer: TriQuint

Overview: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless.

Datasheet Details

Part number TGF2023-2-20
Manufacturer TriQuint
File Size 1.45 MB
Description 90 Watt Discrete Power GaN on SiC HEMT
Datasheet TGF2023-2-20_TriQuint.pdf

General Description

The TriQuint TGF2023-2-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-18 GHz.

The TGF2023-2-20 is designed using TriQuint’s proven TQGaN25 production process.

This process

Key Features

  • Frequency Range: DC - 18 GHz 50.5 dBm Nominal PSAT at 3 GHz 70.5% Maximum PAE 19.2 dB Nominal Power Gain at 3 GHz Bias: VD = 12 - 32 V, IDQ = 400 - 2000 mA Technology: TQGaN25 on SiC Chip Dimensions: 0.82 x 4.56 x 0.10 mm Functional Block Diagram General.

TGF2023-2-20 Distributor